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David Drabold

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David Alan Drabold (born 13 February 1960) is an American physicist, currently Edwin and Ruth Kennedy Distinguished Professor[1] at Ohio University.

Early life

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Born in Akron, Ohio to Walter Drabold Jr. and Marjorie Jane Ruthenberg. Drabold was raised in Cuyahoga Falls, Ohio.

Education

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Drabold received a B.S. in Applied Mathematics from the University of Akron in 1982, and a PhD. in Physics from Washington University in St. Louis under the supervision of Peter Fedders. He was also significantly influenced by E. T. Jaynes. He held term appointments in Physics at the University of Notre Dame, where his key mentor was Otto F. Sankey and both Materials Science and Engineering and Physics at the University of Illinois at Urbana-Champaign, where his key mentor was Richard M. Martin.

Research

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Drabold took a tenure track appointment at Ohio University in 1993. He is a theoretical physicist working primarily in condensed matter physics, materials science, and computational physics with an emphasis on amorphous, paracrystalline and glassy materials,[2] including more than 100 works on the theory of amorphous silicon. He is known for elucidating the consequences of structural or thermal disorder for electronic, optical and transport properties.[3] His published research includes about 300 works, and has received about 12,000 scientific citations, with an h-index of 61 in 2025.[4] He is a Fellow of the American Physical Society (in the Division of Materials Physics in 2003),[5] (citation: For fundamental contributions to the physics of non-crystalline materials and development of efficient first-principles electronic structure methods) a Fellow of the Institute of Physics and Fellow of the Royal Numismatic Society.[6] He has mentored 22 Ph.D. students to date. A Festschrift volume was published[7] commemorating his sixtieth birthday.

He has been Visiting Fellow Commoner in Trinity College, Cambridge,[8] and is a life member of Clare Hall, Cambridge. He was Leverhulme Visiting Professor of Chemistry at the University of Cambridge in 2008.[9]

Selected publications

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Origins of structural and electronic transitions in disordered silicon[10]

Maximum entropy approch for linear scaling in the electronic structure problem[11]

Unconstrained minimization approach for electronic computations that scales linearly with system size[12]

Order-𝑁 projection method for first-principles computations of electronic quantities and Wannier functions[13]

Energetics of Large Fullerenes: Balls, Tubes, and Capsules[14]

Ab Initio Simulation of Amorphous Graphite[15]

Theory of Defects in Semiconductors (with S. K. Estreicher), Springer (2007).[16]

References

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  1. ^ "Ohio University Outlook". www.ohio.edu. Archived from the original on 2008-07-04. Retrieved 2017-06-30.
  2. ^ "Specific Materials". Materials Theory Group: Ohio University. 2024-04-30. Retrieved 2025-07-11.
  3. ^ "Physicists, mathematicians turn to blackboards to answer universal questions". Retrieved 2021-06-21.
  4. ^ "Google Scholar". scholar.google.com. Retrieved 2025-07-11.
  5. ^ "APS Fellow Archive". www.aps.org. Retrieved 2017-06-30.
  6. ^ CRIBB, JOE (2009). "Proceedings". The Numismatic Chronicle. 169: 531–556. JSTOR 42678641.
  7. ^ Biswas, Parthapratim; Chen, Gang; Nakhmanson, Serge; Dong, Jianjun (2021). "Form and Function of Disorder". physica status solidi (b). 258 (9): 2100366. doi:10.1002/pssb.202100366. ISSN 1521-3951.
  8. ^ "Trinity College Annual Record 2008 by Trinity College Cambridge - Issuu". issuu.com. 15 June 2008. Retrieved 2023-05-14.
  9. ^ "Grant listings | The Leverhulme Trust". www.leverhulme.ac.uk. Retrieved 2023-05-14.
  10. ^ Deringer, Volker L.; Bernstein, Noam; CsĂĄnyi, GĂĄbor; Ben Mahmoud, Chiheb; Ceriotti, Michele; Wilson, Mark; Drabold, David A.; Elliott, Stephen R. (2021). "Origins of structural and electronic transitions in disordered silicon". Nature. 589 (7840): 59–64. Bibcode:2021Natur.589...59D. doi:10.1038/s41586-020-03072-z. PMID 33408379. S2CID 244961379. Retrieved 2021-06-21.
  11. ^ Drabold, David A.; Sankey, Otto F. (1993-06-07). "Maximum entropy approach for linear scaling in the electronic structure problem". Physical Review Letters. 70 (23): 3631–3634. doi:10.1103/PhysRevLett.70.3631.
  12. ^ Ordejón, Pablo; Drabold, David A.; Grumbach, Matthew P.; Martin, Richard M. (1993-11-15). "Unconstrained minimization approach for electronic computations that scales linearly with system size". Physical Review B. 48 (19): 14646–14649. doi:10.1103/PhysRevB.48.14646.
  13. ^ Stephan, Uwe; Drabold, David A. (1998-03-15). "Order-$N$ projection method for first-principles computations of electronic quantities and Wannier functions". Physical Review B. 57 (11): 6391–6407. doi:10.1103/PhysRevB.57.6391.
  14. ^ Adams, Gary B.; Sankey, Otto F.; Page, John B.; O'Keeffe, Michael; Drabold, David A. (1992). "Energetics of Large Fullerenes: Balls, Tubes, and Capsules". Science. 256 (5065): 1792–1795. Bibcode:1992Sci...256.1792A. doi:10.1126/science.256.5065.1792. PMID 17743034. S2CID 23675780. Retrieved 2021-06-21.
  15. ^ Thapa, R.; Ugwumadu, C.; Nepal, K.; Trembly, J.; Drabold, D. A. (2022-06-10). "Ab Initio Simulation of Amorphous Graphite". Physical Review Letters. 128 (23): 236402. arXiv:2202.11021. doi:10.1103/PhysRevLett.128.236402.
  16. ^ Drabold, David A.; Estreicher, Stefan K., eds. (2007). "Theory of Defects in Semiconductors". Topics in Applied Physics. doi:10.1007/11690320. ISSN 0303-4216.
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